This seminar will report two key technologies developed for the silicon power semiconductor devices, especially on the power MOSFET-based synchronous rectifiers and the superjunction unipolar technologies. Both their design concepts and process details will be highlighted. Laboratory measurement results will also be presented for discussion.
Furthermore, the wide bandgap AlGaN/GaN heterojunction HEMT devices and their process technologies will also be discussed in the seminar. This includes both the normally-on and normally-off devices, their gate engineering & fluorination processes and the evaluation on their high temperature behaviours.